Semicoa SemiconductorsJANS2N2907AUB通用双极型晶体管
Trans GP BJT PNP 60V 0.6A 500mW 4-Pin Case UB
| Compliant | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| Automotive | No |
| PPAP | No |
| PNP | |
| Bipolar Power | |
| Si | |
| Single | |
| 1 | |
| 60 | |
| 60 | |
| 5 | |
| 1.5@15mA@150mA|3@50mA@500mA | |
| 0.46@15mA@150mA|1.84@50mA@500mA | |
| 0.6 | |
| 20000 | |
| 100@10mA@10V|100@150mA@10V|100@1mA@10V|50@500mA@10V|75@0.1mA@10V | |
| 500 | |
| -65 | |
| 200 | |
| Military | |
| Mounting | Surface Mount |
| Package Height | 1.42(Max) |
| Package Width | 2.74(Max) |
| Package Length | 3.25(Max) |
| PCB changed | 4 |
| Supplier Package | Case UB |
| 4 |
The three terminals of this PNP JANS2N2907AUB GP BJT from Semicoa Semiconductors give it the ability to be used as either an electronic switch or amplifier. This bipolar junction transistor's maximum emitter base voltage is 5 V. Its maximum power dissipation is 500 mW. This bipolar junction transistor has a minimum operating temperature of -65 °C and a maximum of 200 °C. It has a maximum collector emitter voltage of 60 V and a maximum emitter base voltage of 5 V.
| EDA / CAD Models |