Phototransistor IR Chip 2-Pin
| 美国出口管制分类ECCN编码 | EAR99 |
| 环保无铅 | Active |
| 美国海关商品代码 | 8541.41.00.00 |
| Automotive | No |
| PPAP | No |
| Type | IR Chip |
| Phototransistor Type | Phototransistor |
| Lens Shape Type | Flat |
| Number of Channels per Chip | 2 |
| Polarity | NPN |
| Viewing Orientation | Side View |
| Cut-Off Filter | Visible Cut-off |
| Maximum Rise Time (ns) | 15000(Typ) |
| Maximum Fall Time (ns) | 18000(Typ) |
| Maximum Emitter-Collector Voltage (V) | 5 |
| Maximum Collector-Emitter Voltage (V) | 30 |
| Maximum Collector-Emitter Saturation Voltage (V) | 0.4 |
| Maximum Power Dissipation (mW) | 100 |
| Fabrication Technology | NPN Transistor |
| Minimum Operating Temperature (°C) | -40 |
| Maximum Operating Temperature (°C) | 85 |
| Mounting | Through Hole |
| Package Height | 4.12 |
| Package Width | 2.3 |
| Package Length | 4 |
| PCB changed | 2 |
| Pin Count | 2 |
| EDA / CAD Models |
|
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Phototransistor IR Chip 2-Pin
| 美国出口管制分类ECCN编码 | EAR99 |
| 环保无铅 | Active |
| 美国海关商品代码 | 8541.41.00.00 |
| Automotive | No |
| PPAP | No |
| Type | IR Chip |
| Phototransistor Type | Phototransistor |
| Lens Shape Type | Flat |
| Number of Channels per Chip | 2 |
| Polarity | NPN |
| Viewing Orientation | Side View |
| Cut-Off Filter | Visible Cut-off |
| Maximum Rise Time (ns) | 15000(Typ) |
| Maximum Fall Time (ns) | 18000(Typ) |
| Maximum Emitter-Collector Voltage (V) | 5 |
| Maximum Collector-Emitter Voltage (V) | 30 |
| Maximum Collector-Emitter Saturation Voltage (V) | 0.4 |
| Maximum Power Dissipation (mW) | 100 |
| Fabrication Technology | NPN Transistor |
| Minimum Operating Temperature (°C) | -40 |
| Maximum Operating Temperature (°C) | 85 |
| Mounting | Through Hole |
| Package Height | 4.12 |
| Package Width | 2.3 |
| Package Length | 4 |
| PCB changed | 2 |
| Pin Count | 2 |
| EDA / CAD Models |
制造商
