onsemiMJD112-1G达林顿双极型晶体管
Trans Darlington NPN 100V 2A 1750mW 3-Pin(3+Tab) IPAK Tube
| Compliant with Exemption | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| SVHC | Yes |
| SVHC超标 | Yes |
| Automotive | No |
| PPAP | No |
| Mounting | Through Hole |
| Package Height | 6.35(Max) mm |
| Package Width | 2.38(Max) mm |
| Package Length | 6.73(Max) mm |
| PCB changed | 3 |
| Tab | Tab |
| Standard Package Name | TO-251 |
| Supplier Package | IPAK |
| 3 | |
| Lead Shape | Through Hole |
Amplify your current with the NPN MJD112-1G Darlington transistor, developed by ON Semiconductor. This product's maximum continuous DC collector current is 2 A, while its minimum DC current gain is 500@0.5A@3 V|1000@2A@3V|200@4A@3V. It has a maximum collector emitter saturation voltage of 2@8mA@2A|3@40mA@4A V. This Darlington transistor array's maximum emitter base voltage is 5 V, while its maximum base emitter saturation voltage is 4@40mA@4A V. Its maximum power dissipation is 1750 mW. This product comes in rail packaging to keep individual parts separated and protected. This Darlington transistor array has a minimum operating temperature of -65 °C and a maximum of 150 °C. It has a maximum collector emitter voltage of 100 V and a maximum emitter base voltage of 5 V.
| EDA / CAD Models |