onsemiMJD44H11G通用双极型晶体管

Trans GP BJT NPN 80V 8A 1750mW 3-Pin(2+Tab) DPAK Tube

If you require a general purpose BJT that can handle high voltages, then the NPN MJD44H11G BJT, developed by ON Semiconductor, is for you. This bipolar junction transistor's maximum emitter base voltage is 5 V. Its maximum power dissipation is 1750 mW. This product comes in rail packaging to keep individual parts separated and protected. This bipolar junction transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. It has a maximum collector emitter voltage of 80 V and a maximum emitter base voltage of 5 V.

Import TariffMay apply to this part

1,492 个零件: 可以今天配送

    Total$36.23Price for 75

    • (75)

      可以今天配送

      Ships from:
      美国
      Date Code:
      2404+
      Manufacturer Lead Time:
      11 星期
      Country Of origin:
      中国
      • In Stock: 1,492
      • Price: $0.4831