onsemiMJD50T4G通用双极型晶体管

Trans GP BJT NPN 400V 1A 1560mW 3-Pin(2+Tab) DPAK T/R

ON Semiconductor has the solution to your circuit's high-voltage requirements with their NPN MJD50T4G general purpose bipolar junction transistor. This bipolar junction transistor's maximum emitter base voltage is 5 V. Its maximum power dissipation is 1560 mW. This product will be shipped in tape and reel packaging so that components can be mounted effectively. This bipolar junction transistor has a minimum operating temperature of -65 °C and a maximum of 150 °C. It has a maximum collector emitter voltage of 400 V and a maximum emitter base voltage of 5 V.

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5,000 个零件: 可以今天配送

    Total$514.75Price for 2500

    • (2500)

      可以今天配送

      Ships from:
      美国
      Date Code:
      2415+
      Manufacturer Lead Time:
      14 星期
      Country Of origin:
      中国
      • In Stock: 5,000
      • Price: $0.2059