| 欧盟RoHS指令 | Compliant with Exemption |
| 美国出口管制分类ECCN编码 | EAR99 |
| 环保无铅 | Active |
| 美国海关商品代码 | 8541.29.00.95 |
| SVHC | Yes |
| Automotive | No |
| PPAP | No |
| Mounting | Through Hole |
| Package Height | 11.1(Max) mm |
| Package Width | 3(Max) mm |
| Package Length | 7.8(Max) mm |
| PCB changed | 3 |
| Tab | Tab |
| Standard Package Name | TO |
| Supplier Package | TO-225 |
| Pin Count | 3 |
| Lead Shape | Through Hole |
Jump-start your electronic circuit design with this versatile PNP MJE253G GP BJT from ON Semiconductor. This bipolar junction transistor's maximum emitter base voltage is 7 V. Its maximum power dissipation is 15000 mW. This product comes packaged in bulk, so the parts will be stored loosely. It has a maximum collector emitter voltage of 100 V and a maximum emitter base voltage of 7 V. This bipolar junction transistor has a minimum operating temperature of -65 °C and a maximum of 150 °C.
