onsemiMJW18020G通用双极型晶体管
Trans GP BJT NPN 450V 30A 250000mW 3-Pin(3+Tab) TO-247 Tube
| Compliant | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| Automotive | No |
| PPAP | No |
| Mounting | Through Hole |
| Package Height | 21.08(Max) |
| Package Width | 5.3(Max) |
| Package Length | 16.26(Max) |
| PCB changed | 3 |
| Tab | Tab |
| Standard Package Name | TO |
| Supplier Package | TO-247 |
| 3 | |
| Lead Shape | Through Hole |
Add switching and amplifying capabilities to your electronic circuit with this NPN MJW18020G GP BJT from ON Semiconductor. This bipolar junction transistor's maximum emitter base voltage is 9 V. Its maximum power dissipation is 250000 mW. This product comes in rail packaging to keep individual parts separated and protected. This bipolar junction transistor has a minimum operating temperature of -65 °C and a maximum of 150 °C. It has a maximum collector emitter voltage of 1000 V and a maximum emitter base voltage of 9 V.
| EDA / CAD Models |