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onsemiMMBT3906LT1G通用双极型晶体管

Trans GP BJT PNP 40V 0.2A 300mW 3-Pin SOT-23 T/R

Add switching and amplifying capabilities to your electronic circuit with this PNP MMBT3906LT1G GP BJT from ON Semiconductor. This bipolar junction transistor's maximum emitter base voltage is 5 V. Its maximum power dissipation is 300 mW. In order to guarantee safe delivery and allow for quick mounting of this component after delivery, it will be enclosed in tape and reel packaging during shipment. It has a maximum collector emitter voltage of 40 V and a maximum emitter base voltage of 5 V. This bipolar junction transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.

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库存总量: 302,811 个零件

Regional Inventory: 113,811

    Total$0.10Price for 1

    113,811 In stock: 可以今天配送

    • Service Fee  $7.00

      可以今天配送

      Ships from:
      美国
      Date Code:
      2425+
      Manufacturer Lead Time:
      10 星期
      Minimum Of :
      1
      Maximum Of:
      2999
      Country Of origin:
      中国
         
      • Price: $0.0960
      Spliced leader/trailer tape per EIA standards Leader tape:400mm=15.75'; Trail tape:160mm=6.3' more information
    • 可以今天配送

      Ships from:
      美国
      Date Code:
      2425+
      Manufacturer Lead Time:
      10 星期
      Country Of origin:
      中国
      • In Stock: 86,811
      • Price: $0.0960
    • (3000)

      可以今天配送

      Increment:
      3000
      Ships from:
      美国
      Date Code:
      2425+
      Manufacturer Lead Time:
      10 星期
      Country Of origin:
      中国
      • In Stock: 27,000
      • Price: $0.0152
    • (3000)

      可以在 2 天内配送

      Ships from:
      荷兰
      Date Code:
      2518+
      Manufacturer Lead Time:
      10 星期
      Country Of origin:
      中国
      • In Stock: 189,000
      • Price: $0.0175