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onsemiMMBT3906LT1G通用双极型晶体管

Trans GP BJT PNP 40V 0.2A 300mW 3-Pin SOT-23 T/R

Add switching and amplifying capabilities to your electronic circuit with this PNP MMBT3906LT1G GP BJT from ON Semiconductor. This bipolar junction transistor's maximum emitter base voltage is 5 V. Its maximum power dissipation is 300 mW. In order to guarantee safe delivery and allow for quick mounting of this component after delivery, it will be enclosed in tape and reel packaging during shipment. It has a maximum collector emitter voltage of 40 V and a maximum emitter base voltage of 5 V. This bipolar junction transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.

318,000 个零件: 可以在 2 天内配送

    Total$57.60Price for 3000

    • (3000)

      可以在 2 天内配送

      Ships from:
      荷兰
      Date Code:
      2429+
      Manufacturer Lead Time:
      24 星期
      Country Of origin:
      中国
      • In Stock: 318,000
      • Price: $0.0192