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onsemiMMBT4401LT1G通用双极型晶体管

Trans GP BJT NPN 40V 0.6A 300mW 3-Pin SOT-23 T/R

This NPN MMBT4401LT1G general purpose bipolar junction transistor from ON Semiconductor is perfect for a circuit requiring high-current density and can operate in a high voltage range. This bipolar junction transistor's maximum emitter base voltage is 6 V. Its maximum power dissipation is 300 mW. Tape and reel packaging will encase this product during shipment, in order to ensure safe delivery and enable quick mounting of components. It has a maximum collector emitter voltage of 40 V and a maximum emitter base voltage of 6 V. This bipolar junction transistor has an operating temperature range of -55 °C to 150 °C.

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      Ships from:
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      Date Code:
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      Manufacturer Lead Time:
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      Spliced leader/trailer tape per EIA standards Leader tape:400mm=15.75'; Trail tape:160mm=6.3' more information
    • 可以今天配送

      Ships from:
      美国
      Date Code:
      2341+
      Manufacturer Lead Time:
      12 星期
      Country Of origin:
      中国
      • In Stock: 41,602
      • Price: $0.0537
    • (3000)

      可以今天配送

      Increment:
      3000
      Ships from:
      美国
      Date Code:
      2421+
      Manufacturer Lead Time:
      12 星期
      Country Of origin:
      中国
      • In Stock: 1,251,000
      • Price: $0.0166