Diodes IncorporatedMMST5551-7-F通用双极型晶体管
Trans GP BJT NPN 160V 0.2A 200mW 3-Pin SOT-323 T/R
| Compliant | |
| EAR99 | |
| Active | |
| 8541.21.00.75 | |
| Automotive | No |
| PPAP | No |
| NPN | |
| Bipolar Small Signal | |
| Single | |
| 1 | |
| 180 | |
| 160 | |
| 6 | |
| 1@1mA@10mA|1@5mA@50mA | |
| -55 to 150 | |
| 0.15@1mA@10mA|0.2@5mA@50mA | |
| 0.2 | |
| 50 | |
| 80@1mA@5V|80@10mA@5V|30@50mA@5V | |
| 200 | |
| 300 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Mounting | Surface Mount |
| Package Height | 0.95 mm |
| Package Width | 1.3 mm |
| Package Length | 2.15 mm |
| PCB changed | 3 |
| Standard Package Name | SOT |
| Supplier Package | SOT-323 |
| 3 |
Add switching and amplifying capabilities to your electronic circuit with this NPN MMST5551-7-F GP BJT from Diodes Zetex. This bipolar junction transistor's maximum emitter base voltage is 6 V. Its maximum power dissipation is 200 mW. This product will be shipped in tape and reel packaging for quick mounting and safe delivery. This bipolar junction transistor has an operating temperature range of -55 °C to 150 °C. It has a maximum collector emitter voltage of 160 V and a maximum emitter base voltage of 6 V.
| EDA / CAD Models |