onsemiMUN5211T1G数字双极型晶体管

Trans Digital BJT NPN 50V 0.1A 310mW 3-Pin SC-70 T/R

Do you need a device that can offer the benefits of traditional BJTs with the compatibility for digital signal processors? The NPN MUN5211T1G digital transistor from ON Semiconductor is your solution. This product's maximum continuous DC collector current is 100 mA, while its minimum DC current gain is 35@5mA@10 V. It has a maximum collector emitter saturation voltage of 0.25@0.3mA@10mA V. It has a maximum collector emitter voltage of 50 V. Its maximum power dissipation is 310 mW. This product will be shipped in tape and reel packaging to allow for quick mounting and safe delivery. This transistor has an operating temperature range of -55 °C to 150 °C. It is made in a single configuration.

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Quantity Increments of 3000 Minimum 30000
  • Date Code:
    2413+
    Manufacturer Lead Time:
    12 星期
    Country Of origin:
    中国
    • Price: $0.0143
    1. 24000+$0.0143