欧盟RoHS指令 | Compliant |
美国出口管制分类ECCN编码 | EAR99 |
环保无铅 | Active |
美国海关商品代码 | 8542.39.00.60 |
Automotive | No |
PPAP | No |
Driver Type | High and Low Side |
Driver Configuration | Inverting|Non-Inverting |
Bridge Type | Half Bridge |
Number of Drivers | 2 |
High and Low Sides Dependency | Synchronous |
Type | IGBT|MOSFET |
Number of Outputs | 2 |
Maximum Rise Time (ns) | 160 |
Maximum Fall Time (ns) | 75 |
Maximum Propagation Delay Time (ns) | 800 |
Input Logic Compatibility | 3.3V|5V |
Minimum Operating Supply Voltage (V) | 10 |
Maximum Operating Supply Voltage (V) | 20 |
Typical Input Low Threshold Voltage (V) | 0.8(Max) |
Typical Input High Threshold Voltage (V) | 2.3(Min) |
Output Resistance (Ohm) | 30 |
Minimum Operating Temperature (°C) | -55 |
Maximum Operating Temperature (°C) | 150 |
Special Features | Under Voltage Lockout |
Packaging | Tape and Reel |
Mounting | Surface Mount |
Package Height | 1.5(Max) |
Package Width | 4(Max) |
Package Length | 5(Max) |
PCB changed | 8 |
Standard Package Name | SO |
Supplier Package | SOIC N |
Pin Count | 8 |
Lead Shape | Gull-wing |
Switch between states in a high power transistor by using this NCP5104DR2G power driver developed by ON Semiconductor. This device has a maximum propagation delay time of 800 ns. In order to guarantee safe delivery and allow for quick mounting of this component after delivery, it will be enclosed in tape and reel packaging during shipment. This gate driver has a minimum operating temperature of -55 °C and a maximum of 150 °C. This device has a minimum operating supply voltage of 10 V and a maximum of 20 V.