| 欧盟RoHS指令 | Compliant |
| 美国出口管制分类ECCN编码 | EAR99 |
| 环保无铅 | Active |
| 美国海关商品代码 | 8541.29.00.75 |
| Automotive | No |
| PPAP | No |
| Mounting | Surface Mount |
| Package Height | 0.75(Max) |
| Package Width | 2 |
| Package Length | 2 |
| PCB changed | 3 |
| Standard Package Name | DFN |
| Supplier Package | WDFN EP |
| Pin Count | 3 |
| Lead Shape | No Lead |
Use this versatile NPN NSS20501UW3T2G GP BJT from ON Semiconductor to design various electronic circuits. This bipolar junction transistor's maximum emitter base voltage is 6 V. Its maximum power dissipation is 1500 mW. In order to guarantee safe delivery and allow for quick mounting of this component after delivery, it will be enclosed in tape and reel packaging during shipment. It has a maximum collector emitter voltage of 20 V and a maximum emitter base voltage of 6 V. This bipolar junction transistor has an operating temperature range of -55 °C to 150 °C.
