| 欧盟RoHS指令 | Compliant |
| 美国出口管制分类ECCN编码 | EAR99 |
| 环保无铅 | Active |
| 美国海关商品代码 | 8541.29.00.95 |
| Automotive | No |
| PPAP | No |
| Mounting | Surface Mount |
| Package Height | 0.37 |
| Package Width | 0.8 |
| Package Length | 0.6 |
| PCB changed | 3 |
| Standard Package Name | SOT |
| Supplier Package | SOT-1123 |
| Pin Count | 3 |
| Lead Shape | Flat |
Superior characteristics of this NST847BF3T5G RF amplifier from ON Semiconductor make it perfect for operating at higher RF frequency ranges than RF MOSFETS. This product's minimum DC current gain is 200@2mA@5 V. It has a maximum collector emitter saturation voltage of 0.25@0.5mA@10mA|0.6@5mA@100mA V. This RF transistor has an operating temperature range of -55 °C to 150 °C.
