| 欧盟RoHS指令 | Compliant with Exemption |
| 美国出口管制分类ECCN编码 | EAR99 |
| 环保无铅 | Active |
| 美国海关商品代码 | 8541.29.00.95 |
| SVHC | Yes |
| SVHC超标 | Yes |
| Automotive | No |
| PPAP | No |
| Mounting | Surface Mount |
| Package Height | 1.05(Max) |
| Package Width | 5.9 |
| Package Length | 4.9 |
| PCB changed | 5 |
| Standard Package Name | DFN |
| Supplier Package | SO-FL EP |
| Pin Count | 5 |
| Lead Shape | Flat |
Looking for a component that can both amplify and switch between signals within your circuit? The NTMFS5C670NLT1G power MOSFET from ON Semiconductor provides the solution. Its maximum power dissipation is 3600 mW. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has an operating temperature range of -55 °C to 175 °C.
