| 欧盟RoHS指令 | Compliant |
| 美国出口管制分类ECCN编码 | EAR99 |
| 环保无铅 | Active |
| 美国海关商品代码 | 8541.49.80.00 |
| Automotive | No |
| PPAP | No |
| Type | IR Chip |
| Phototransistor Type | Phototransistor |
| Lens Shape Type | Domed |
| Material | Silicon |
| Number of Channels per Chip | 1 |
| Polarity | NPN |
| Viewing Orientation | Side View |
| Maximum Light Current (uA) | 2000(Min) |
| Maximum Dark Current (nA) | 100 |
| Maximum Emitter-Collector Voltage (V) | 5 |
| Maximum Collector-Emitter Voltage (V) | 30 |
| Maximum Collector-Emitter Saturation Voltage (V) | 0.4 |
| Maximum Power Dissipation (mW) | 100 |
| Fabrication Technology | NPN Transistor |
| Minimum Operating Temperature (°C) | -40 |
| Maximum Operating Temperature (°C) | 100 |
| Packaging | Bag |
| Mounting | Through Hole |
| Package Height | 5.84(Max) |
| Package Width | 4.6 |
| Package Length | 6.22 |
| PCB changed | 2 |
| Supplier Package | Side Looker |
| Pin Count | 2 |
| Lead Shape | Through Hole |
