STMicroelectronicsPD57060-E射频 MOSFETs
Trans RF MOSFET N-CH 65V 7A 3-Pin PowerSO-10RF (Formed lead) Tube
| Compliant with Exemption | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| SVHC | Yes |
| SVHC超标 | Yes |
| Automotive | No |
| PPAP | No |
| Single | |
| Enhancement | |
| N | |
| 1 | |
| LDMOS | |
| 65 | |
| ±20 | |
| 5(Min) | |
| 7 | |
| 83@28V | |
| 3@28V | |
| 58@28V | |
| 2.5(Min) | |
| 79000 | |
| 60(Min) | |
| 14.3 | |
| 1000 | |
| 54 | |
| -65 | |
| 165 | |
| Tube | |
| Industrial | |
| Mounting | Surface Mount |
| Package Height | 3.5 |
| Package Width | 9.4 |
| Package Length | 9.5 |
| PCB changed | 3 |
| Supplier Package | PowerSO-10RF (Formed lead) |
| 3 | |
| Lead Shape | Gull-wing |
This specially engineered PD57060-E RF amplifier from STMicroelectronics is perfect for circuits that operate at high frequencies. Its maximum power dissipation is 79000 mW. In order to ensure parts aren't damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This RF power MOSFET has an operating temperature range of -65 °C to 165 °C. Its maximum frequency is 1000 MHz. This N channel RF power MOSFET operates in enhancement mode.
| EDA / CAD Models |