STMicroelectronicsPD85025-E射频 MOSFETs
Trans RF MOSFET N-CH 40V 7A 3-Pin PowerSO-10RF (Formed lead) Tube
| Compliant with Exemption | |
| EAR99 | |
| Obsolete | |
| SVHC | Yes |
| SVHC超标 | Yes |
| Automotive | No |
| PPAP | No |
| Single | |
| Enhancement | |
| N | |
| 1 | |
| LDMOS | |
| 40 | |
| 15 | |
| 20(Min) | |
| 7 | |
| 55@12.5V | |
| 1.5@12.5V | |
| 40@12.5V | |
| 79000 | |
| 30(Typ) | |
| 17.3 | |
| 1000 | |
| 66 | |
| -65 | |
| 165 | |
| Tube | |
| Industrial | |
| Mounting | Surface Mount |
| Package Height | 3.5 |
| Package Width | 9.4 |
| Package Length | 9.5 |
| PCB changed | 3 |
| Supplier Package | PowerSO-10RF (Formed lead) |
| 3 | |
| Lead Shape | Gull-wing |
Implement a switching capability into your circuit design with this PD85025-E RF amplifier from STMicroelectronics. Its maximum power dissipation is 79000 mW. In order to ensure parts aren't damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This RF power MOSFET has a minimum operating temperature of -65 °C and a maximum of 165 °C. This N channel RF power MOSFET operates in enhancement mode. Its maximum frequency is 1000 MHz.
| EDA / CAD Models |