NXP SemiconductorsPMBT3906215通用双极型晶体管

Trans GP BJT PNP 40V 0.2A 250mW 3-Pin SOT-23 T/R

The PNP PMBT3906,215 general purpose bipolar junction transistor, developed by NXP Semiconductors, is the perfect solution for your high-current density needs. This bipolar junction transistor's maximum emitter base voltage is 6 V. Its maximum power dissipation is 250 mW. This product will be shipped in tape and reel packaging for quick mounting and safe delivery. It has a maximum collector emitter voltage of 40 V and a maximum emitter base voltage of 6 V. This bipolar junction transistor has a minimum operating temperature of -65 °C and a maximum of 150 °C.

A datasheet is only available for this product at this time.