| 欧盟RoHS指令 | Compliant |
| 美国出口管制分类ECCN编码 | EAR99 |
| 环保无铅 | Active |
| 美国海关商品代码 | 8541.29.00.75 |
| Automotive | No |
| PPAP | No |
| Type | NPN |
| Configuration | Single |
| Maximum Collector-Emitter Voltage (V) | 50 |
| Maximum Continuous DC Collector Current (mA) | 100 |
| Minimum DC Current Gain | 50@10mA@5V |
| Typical Input Resistor (kOhm) | 10 |
| Maximum Collector-Emitter Saturation Voltage (V) | 0.3@0.5mA@5mA |
| Typical Resistor Ratio | 1 |
| Maximum Power Dissipation (mW) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Operating Temperature (°C) | 150 |
| Packaging | Tape and Reel |
| Mounting | Surface Mount |
| Package Width | 0.8 |
| Package Length | 1.2 |
| PCB changed | 3 |
| Supplier Package | VESM |
| Pin Count | 3 |
Do you need a device that can offer the benefits of traditional BJTs with the compatibility for digital signal processors? The NPN RN1102MFV,L3F digital transistor from Toshiba is your solution. This product's maximum continuous DC collector current is 100 mA, while its minimum DC current gain is 50@10mA@5 V. It has a maximum collector emitter saturation voltage of 0.3@0.25mA@5mA V. Its maximum power dissipation is 150 mW. It has a maximum collector emitter voltage of 50 V. This transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. It is made in a single configuration.
