onsemiSBC847BWT1G通用双极型晶体管
Trans GP BJT NPN 45V 0.1A 200mW 3-Pin SC-70 T/R Automotive AEC-Q101
| Compliant | |
| EAR99 | |
| Active | |
| 8541.21.00.75 | |
| Automotive | Yes |
| PPAP | Yes |
| NPN | |
| Bipolar Small Signal | |
| Si | |
| Single | |
| 1 | |
| 50 | |
| 45 | |
| 6 | |
| 0.7(Typ)@0.5mA@10mA|0.9(Typ)@5mA@100mA | |
| -55 to 150 | |
| 0.25@0.5mA@10mA|0.6@5mA@100mA | |
| 0.1 | |
| 15 | |
| 200@2mA@5V | |
| 200 | |
| 100(Min) | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Automotive | |
| Mounting | Surface Mount |
| Package Height | 0.85 |
| Package Width | 1.24 |
| Package Length | 2 |
| PCB changed | 3 |
| Standard Package Name | SOT |
| Supplier Package | SC-70 |
| 3 | |
| Lead Shape | Gull-wing |
Design various electronic circuits with this versatile NPN SBC847BWT1G GP BJT from ON Semiconductor. This bipolar junction transistor's maximum emitter base voltage is 6 V. Its maximum power dissipation is 150 mW. In order to guarantee safe delivery and allow for quick mounting of this component after delivery, it will be enclosed in tape and reel packaging during shipment. This bipolar junction transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. It has a maximum collector emitter voltage of 45 V and a maximum emitter base voltage of 6 V.
| EDA / CAD Models |