| 欧盟RoHS指令 | Compliant with Exemption |
| 美国出口管制分类ECCN编码 | EAR99 |
| 环保无铅 | Active |
| 美国海关商品代码 | 8541.29.00.95 |
| SVHC | Yes |
| SVHC超标 | Yes |
| Automotive | No |
| PPAP | No |
| Mounting | Surface Mount |
| Package Height | 2.4(Max) |
| Package Width | 6.2(Max) |
| Package Length | 6.6(Max) |
| PCB changed | 2 |
| Tab | Tab |
| Standard Package Name | TO-252 |
| Supplier Package | DPAK |
| Pin Count | 3 |
| Lead Shape | Gull-wing |
Make an effective common gate amplifier using this STD11N65M5 power MOSFET from STMicroelectronics. Its maximum power dissipation is 85000 mW. Tape and reel packaging will encase this product during shipment, in order to ensure safe delivery and enable quick mounting of components. This N channel MOSFET transistor operates in enhancement mode. This device utilizes mdmesh technology. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C.
