STMicroelectronicsSTGB8NC60KDT4IGBT 芯片

Trans IGBT Chip N-CH 600V 15A 65W 3-Pin(2+Tab) D2PAK T/R

The STGB8NC60KDT4 IGBT transistor from STMicroelectronics is perfect to use as an electronic switch eliminating the current at the gate. Its maximum power dissipation is 65000 mW. It has a maximum collector emitter voltage of 600 V. This product will be shipped in tape and reel packaging so that components can be mounted effectively. This IGBT transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. It is made in a single configuration.

A datasheet is only available for this product at this time.