| 美国出口管制分类ECCN编码 | EAR99 |
| 环保无铅 | Active |
| 美国海关商品代码 | 8541.49.80.00 |
| Automotive | No |
| PPAP | No |
| Type | IR Chip |
| Phototransistor Type | Phototransistor |
| Lens Shape Type | Domed |
| Material | Silicon |
| Number of Channels per Chip | 1 |
| Polarity | NPN |
| Half Intensity Angle Degrees (°) | 74 |
| Viewing Orientation | Side View |
| Peak Wavelength (nm) | 920 |
| Cut-Off Filter | Visible Cut-off |
| Maximum Light Current (uA) | 4000 |
| Maximum Collector Current (mA) | 100 |
| Maximum Dark Current (nA) | 100 |
| Maximum Emitter-Collector Voltage (V) | 7 |
| Maximum Collector-Emitter Voltage (V) | 70 |
| Maximum Collector-Emitter Saturation Voltage (V) | 0.3 |
| Maximum Power Dissipation (mW) | 150 |
| Fabrication Technology | NPN Transistor |
| Minimum Operating Temperature (°C) | -40 |
| Maximum Operating Temperature (°C) | 85 |
| Mounting | Through Hole |
| Package Height | 5 |
| Package Width | 2.65 |
| Package Length | 5 |
| PCB changed | 2 |
| Pin Count | 2 |
