onsemi TIP31AG 通用双极型晶体管
Trans GP BJT NPN 60V 3A 2000mW 3-Pin(3+Tab) TO-220AB Tube
产品技术规格
| Compliant with Exemption | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| SVHC | Yes |
| SVHC超标 | Yes |
| Automotive | No |
| PPAP | No |
| NPN | |
| Bipolar Power | |
| Si | |
| Single | |
| 1 | |
| 60 | |
| 60 | |
| 5 | |
| 1 | |
| -65 to 150 | |
| 1.2@375mA@3A | |
| 3 | |
| 25@1A@4V|10@3A@4V | |
| 2000 | |
| 3(Min) | |
| -65 | |
| 150 | |
| Tube | |
| Mounting | Through Hole |
| Package Height | 9.28(Max) |
| Package Width | 4.83(Max) |
| Package Length | 10.53(Max) |
| PCB changed | 3 |
| Tab | Tab |
| Standard Package Name | TO |
| Supplier Package | TO-220AB |
| 3 | |
| Lead Shape | Through Hole |
Design filters, receivers, transmitters, op-amps, power supplies, and control circuits with this versatile NPN TIP31AG GP BJT from ON Semiconductor. This bipolar junction transistor's maximum emitter base voltage is 5 V. Its maximum power dissipation is 2000 mW. This product comes in rail packaging to keep individual parts separated and protected. It has a maximum collector emitter voltage of 60 V and a maximum emitter base voltage of 5 V. This bipolar junction transistor has a minimum operating temperature of -65 °C and a maximum of 150 °C.
Symbols and Footprints
| EDA / CAD Models |
