Supplier Unconfirmed | |
EAR99 | |
Active | |
8541.21.00.75 | |
Automotive | No |
PPAP | No |
NPN | |
Bipolar Power | |
Si | |
Single | |
1 | |
140 | |
80 | |
7 | |
1.1@15mA@150mA | |
-65 to 200 | |
0.2@15mA@150mA|0.5@50mA@500mA | |
1 | |
10 | |
15@1A@10V|30@100uA@10V|30@500mA@10V|40@10mA@10V|40@150mA@10V | |
800 | |
100(Min) | |
-65 | |
200 | |
Box | |
Diameter | 9.4(Max) |
Mounting | Through Hole |
Package Height | 6.6(Max) |
PCB changed | 3 |
Standard Package Name | TO |
Supplier Package | TO-39 |
3 | |
Lead Shape | Through Hole |
This specially engineered NPN 2N3020 GP BJT from Central Semiconductor comes with a variety of characteristics including absolute maximum ratings, thermal characteristics, and DC and AC electrical characteristics. This bipolar junction transistor's maximum emitter base voltage is 7 V. Its maximum power dissipation is 800 mW. This bipolar junction transistor has a minimum operating temperature of -65 °C and a maximum of 200 °C. It has a maximum collector emitter voltage of 80 V and a maximum emitter base voltage of 7 V.