| Supplier Unconfirmed | |
| EAR99 | |
| Active | |
| 8541.21.00.75 | |
| Automotive | No |
| PPAP | No |
| Diamètre | 9.4(Max) |
| Installation | Through Hole |
| Hauteur du paquet | 6.6(Max) |
| Carte électronique changée | 3 |
| Nom de lemballage standard | TO |
| Conditionnement du fournisseur | TO-39 |
| 3 | |
| Forme de sonde | Through Hole |
This specially engineered NPN 2N3020 GP BJT from Central Semiconductor comes with a variety of characteristics including absolute maximum ratings, thermal characteristics, and DC and AC electrical characteristics. This bipolar junction transistor's maximum emitter base voltage is 7 V. Its maximum power dissipation is 800 mW. This bipolar junction transistor has a minimum operating temperature of -65 °C and a maximum of 200 °C. It has a maximum collector emitter voltage of 80 V and a maximum emitter base voltage of 7 V.
| EDA / CAD Models |