Infineon Technologies AGBC847BWH6327XTSA1GP BJT

Trans GP BJT NPN 45V 0.1A 250mW Automotive AEC-Q101 3-Pin SOT-323 T/R

Use this versatile NPN BC847BWH6327XTSA1 GP BJT from Infineon Technologies to design various electronic circuits. This bipolar junction transistor's maximum emitter base voltage is 6 V. Its maximum power dissipation is 250 mW. This component will be shipped in tape and reel packaging for effective mounting and safe delivery. This bipolar junction transistor has a minimum operating temperature of -65 °C and a maximum of 150 °C. It has a maximum collector emitter voltage of 45 V and a maximum emitter base voltage of 6 V.

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83,115 parts: Ships in 10 days

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    • Ships in 10 days

      Ships from:
      United States of America
      Date Code:
      2039+
      Manufacturer Lead Time:
      0 weeks
      Country Of origin:
      China
      • In Stock: 83,115 parts
      • Price: $0.0210