Infineon Technologies AGBC847BWH6327XTSA1GP BJT
Trans GP BJT NPN 45V 0.1A 250mW Automotive AEC-Q101 3-Pin SOT-323 T/R
Compliant | |
EAR99 | |
LTB | |
BC847BWH6327XTSA1 | |
Automotive | Yes |
PPAP | Unknown |
Installation | Surface Mount |
Hauteur du paquet | 0.9(Max) |
Largeur du paquet | 1.25 |
Longueur du paquet | 2 |
Carte électronique changée | 3 |
Nom de lemballage standard | SOT |
Conditionnement du fournisseur | SOT-323 |
3 | |
Forme de sonde | Gull-wing |
Use this versatile NPN BC847BWH6327XTSA1 GP BJT from Infineon Technologies to design various electronic circuits. This bipolar junction transistor's maximum emitter base voltage is 6 V. Its maximum power dissipation is 250 mW. This component will be shipped in tape and reel packaging for effective mounting and safe delivery. This bipolar junction transistor has a minimum operating temperature of -65 °C and a maximum of 150 °C. It has a maximum collector emitter voltage of 45 V and a maximum emitter base voltage of 6 V.