EU RoHS | Compliant |
ECCN (US) | EAR99 |
Part Status | Active |
HTS | 8541.29.00.95 |
Automotive | No |
PPAP | No |
Material | Si |
Configuration | Single |
Channel Mode | Enhancement |
Channel Type | N |
Number of Elements per Chip | 1 |
Process Technology | DMOS |
Maximum Drain Source Voltage (V) | 40 |
Maximum Gate Source Voltage (V) | ±20 |
Maximum Gate Threshold Voltage (V) | 7 |
Maximum VSWR | 20 |
Maximum Continuous Drain Current (A) | 8 |
Maximum Gate Source Leakage Current (nA) | 1000 |
Maximum IDSS (uA) | 1000 |
Typical Input Capacitance @ Vds (pF) | 48(Max)@0V |
Typical Reverse Transfer Capacitance @ Vds (pF) | 4(Max)@12.5V |
Typical Output Capacitance @ Vds (pF) | 40(Max)@12.5V |
Typical Forward Transconductance (S) | 0.72(Min) |
Maximum Power Dissipation (mW) | 42000 |
Typical Power Gain (dB) | 10(Min) |
Maximum Frequency (MHz) | 1000 |
Minimum Frequency (MHz) | 0 |
Typical Drain Efficiency (%) | 40(Min) |
Minimum Operating Temperature (°C) | -65 |
Maximum Operating Temperature (°C) | 200 |
Mounting | Surface Mount |
Package Height | 3.56 |
Package Width | 6.35 |
Package Length | 6.35 |
PCB changed | 3 |
Standard Package Name | Module |
Supplier Package | Case DP |
Pin Count | 3 |