| EU RoHS | Compliant with Exemption |
| ECCN (US) | EAR99 |
| Part Status | Obsolete |
| HTS | 8541.29.00.95 |
| SVHC | Yes |
| SVHC Exceeds Threshold | Yes |
| Automotive | No |
| PPAP | No |
| Channel Type | N |
| Configuration | Single |
| Maximum Collector-Emitter Voltage (V) | 1200 |
| Maximum Gate Emitter Voltage (V) | ±20 |
| Typical Collector Emitter Saturation Voltage (V) | 2.8 |
| Maximum Continuous Collector Current (A) | 50 |
| Maximum Gate Emitter Leakage Current (uA) | 0.1 |
| Maximum Power Dissipation (W) | 250 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Operating Temperature (°C) | 150 |
| Mounting | Through Hole |
| Package Height | 21.46(Max) |
| Package Width | 5.3(Max) |
| Package Length | 16.26(Max) |
| PCB changed | 3 |
| Tab | Tab |
| Standard Package Name | TO |
| Supplier Package | TO-247AD |
| Pin Count | 3 |
The IXGH28N120B IGBT transistor from Ixys Corporation is perfect to use as an electronic switch eliminating the current at the gate. Its maximum power dissipation is 250000 mW. It has a maximum collector emitter voltage of 1200 V. This IGBT transistor has an operating temperature range of -55 °C to 150 °C. It is made in a single configuration.
