onsemiMJE13007GGP BJT

Trans GP BJT NPN 400V 8A 80000mW 3-Pin(3+Tab) TO-220AB Tube

Thanks to ON Semiconductor, your circuit can handle high levels of voltage using the NPN MJE13007G general purpose bipolar junction transistor. This bipolar junction transistor's maximum emitter base voltage is 9 V. Its maximum power dissipation is 80000 mW. This product comes in rail packaging to keep individual parts separated and protected. This bipolar junction transistor has a minimum operating temperature of -65 °C and a maximum of 150 °C. It has a maximum collector emitter voltage of 400 V and a maximum emitter base voltage of 9 V.

Import TariffMay apply to this part

25 parts: Ships today

    Total$1.18Price for 1

    • Ships today

      Ships from:
      United States of America
      Date Code:
      2328+
      Manufacturer Lead Time:
      14 weeks
      Country Of origin:
      China
      • In Stock: 25 parts
      • Price: $1.1841