onsemiMJE13007GGP BJT

Trans GP BJT NPN 400V 8A 80000mW 3-Pin(3+Tab) TO-220AB Tube

Thanks to ON Semiconductor, your circuit can handle high levels of voltage using the NPN MJE13007G general purpose bipolar junction transistor. This bipolar junction transistor's maximum emitter base voltage is 9 V. Its maximum power dissipation is 80000 mW. This product comes in rail packaging to keep individual parts separated and protected. This bipolar junction transistor has a minimum operating temperature of -65 °C and a maximum of 150 °C. It has a maximum collector emitter voltage of 400 V and a maximum emitter base voltage of 9 V.

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25 부품 : 오늘 배송

    Total$1.18Price for 1

    • 오늘 배송

      Ships from:
      미국
      Date Code:
      2328+
      Manufacturer Lead Time:
      14 주
      Country Of origin:
      중국
      • In Stock: 25 부품
      • Price: $1.1841