Share this search
Filters
Selecting a category will provide you with more filters and product details.
| Part No. | Price | Stock | Manufacturer | Category | Description | Maximum Junction Case Thermal Resistance | Category | Configuration | Number of Elements per Chip | Operating Junction Temperature - (°C) | Channel Mode | Typical Fall Time - (ns) | Maximum Gate Threshold Voltage - (V) | Supplier Package | Typical Rise Time - (ns) | Tradename | Maximum Continuous Drain Current Range - (A) | Maximum Drain Source Voltage - (V) | Process Technology | Typical Gate Charge @ Vgs - (nC) | Maximum Drain Source Resistance - (mOhm) | Channel Type | Maximum IDSS - (uA) | Maximum Junction Ambient Thermal Resistance | Package Family Name | Maximum Power Dissipation - (mW) | Maximum Operating Temperature - (°C) | Maximum Continuous Drain Current - (A) | Material | Minimum Operating Temperature - (°C) | Typical Turn-On Delay Time - (ns) | ROHS | Pin Count | Maximum Gate Source Voltage - (V) | Typical Gate Charge @ 10V - (nC) | Life Cycle | Typical Turn-Off Delay Time - (ns) | Typical Input Capacitance @ Vds - (pF) | Typical Output Capacitance - (pF) | Packaging |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Datasheet for 3 products: View
|
View Datasheet |
Various
|
GaN Systems | Trans MOSFET N-CH GaN 650V 30A 8-Pin PDFN EP T/R | 0.5°C/W(Typ) | Power MOSFET | Single Quad Drain Triple Source | 1 | Enhancement | 5.7 | 2.6 | PDFN EP | 6.3 | 20 to 50 | 650 | HEMT | 6.7@6V | 68@6V | N | 58 | 35°C/W(Typ) | Various | 30 | GaN | 8.2 | Yes | 8 | 7 | Active | 10.8 | 235@400V | 60 | Tape and Reel | |||||||
|
GS-065-030-2-L-TR
Trans MOSFET N-CH GaN 650V 30A 8-Pin PDFN EP T/R
|
|
GaN Systems | Trans MOSFET N-CH GaN 650V 30A 8-Pin PDFN EP T/R | 0.5°C/W(Typ) | Power MOSFET | Single Quad Drain Triple Source | 1 | Enhancement | 5.7 | 2.6 | PDFN EP | 6.3 | 20 to 50 | 650 | HEMT | 6.7@6V | 68@6V | N | 58 | 35°C/W(Typ) | 30 | GaN | 8.2 | Yes | 8 | 7 | Active | 10.8 | 235@400V | 60 | Tape and Reel | |||||||||
|
GS-065-030-2-L-MR
Trans MOSFET N-CH GaN 650V 30A 8-Pin PDFN EP T/R
|
|
GaN Systems | Trans MOSFET N-CH GaN 650V 30A 8-Pin PDFN EP T/R | 0.5°C/W(Typ) | Power MOSFET | Single Quad Drain Triple Source | 1 | Enhancement | 5.7 | 2.6 | PDFN EP | 6.3 | 20 to 50 | 650 | HEMT | 6.7@6V | 68@6V | N | 58 | 35°C/W(Typ) | DFN | 30 | GaN | 8.2 | Yes | 8 | 7 | Active | 10.8 | 235@400V | 60 | Tape and Reel | ||||||||
|
GS-065-030-2-L-MR
Trans MOSFET N-CH GaN 650V 30A 8-Pin PDFN EP T/R
|
|
GaN Systems | Trans MOSFET N-CH GaN 650V 30A 8-Pin PDFN EP T/R | 0.5°C/W(Typ) | Power MOSFET | Single Quad Drain Triple Source | 1 | Enhancement | 5.7 | 2.6 | PDFN EP | 6.3 | 20 to 50 | 650 | HEMT | 6.7@6V | 68@6V | N | 58 | 35°C/W(Typ) | DFN | 30 | GaN | 8.2 | Yes | 8 | 7 | Active | 10.8 | 235@400V | 60 | Tape and Reel |