Infineon Technologies AGSKW25N120FKSA1IGBT Chip
Trans IGBT Chip N-CH 1200V 46A 313W 3-Pin(3+Tab) TO-247 Tube
Compliant | |
EAR99 | |
Obsolete | |
SKW25N120FKSA1 | |
Automotive | No |
PPAP | No |
Mounting | Through Hole |
Package Height | 21.1(Max) |
Package Width | 5.16(Max) |
Package Length | 16.03(Max) |
PCB changed | 3 |
Tab | Tab |
Standard Package Name | TO-247 |
Supplier Package | TO-247 |
3 | |
Lead Shape | Through Hole |
The SKW25N120FKSA1 IGBT transistor from Infineon Technologies will work effectively even with higher currents. Its maximum power dissipation is 313000 mW. It has a maximum collector emitter voltage of 1200 V. This IGBT transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. It is made in a single configuration.