STMicroelectronicsSTGP10H60DFIGBT Chip
Trans IGBT Chip N-CH 600V 20A 115W 3-Pin(3+Tab) TO-220AB Tube
| Compliant with Exemption | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| SVHC | Yes |
| SVHC Exceeds Threshold | Yes |
| Automotive | No |
| PPAP | No |
| Field Stop|Trench | |
| N | |
| Single | |
| 600 | |
| ±20 | |
| 1.5 | |
| 20 | |
| 0.25 | |
| 115 | |
| -55 | |
| 175 | |
| Tube | |
| Industrial | |
| Mounting | Through Hole |
| Package Height | 9.15(Max) |
| Package Width | 4.6(Max) |
| Package Length | 10.4(Max) |
| PCB changed | 3 |
| Tab | Tab |
| Standard Package Name | TO |
| Supplier Package | TO-220AB |
| 3 | |
| Lead Shape | Through Hole |
Use the STGP10H60DF IGBT transistor from STMicroelectronics as an electronic switch. Its maximum power dissipation is 115000 mW. It has a maximum collector emitter voltage of 600 V. In order to ensure parts aren't damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This IGBT transistor has a minimum operating temperature of -55 °C and a maximum of 175 °C. It is made in a single configuration. This device is made with field stop|trench technology.
| EDA / CAD Models |