EU RoHS | Compliant |
ECCN (US) | EAR99 |
Part Status | Active |
HTS | 8541.29.00.95 |
Automotive | No |
PPAP | No |
Material | Si |
Configuration | Single Triple Source |
Type | MOSFET |
Channel Mode | Enhancement |
Channel Type | N |
Number of Elements per Chip | 1 |
Maximum Drain Source Voltage (V) | 170 |
Maximum Gate Source Voltage (V) | ±40 |
Maximum Gate Threshold Voltage (V) | 4.4 |
Maximum VSWR | 70 |
Maximum Continuous Drain Current (A) | 50 |
Maximum Gate Source Leakage Current (nA) | 2000 |
Maximum IDSS (uA) | 2000 |
Typical Input Capacitance @ Vds (pF) | 1050@50V |
Typical Reverse Transfer Capacitance @ Vds (pF) | 62@50V |
Typical Output Capacitance @ Vds (pF) | 520@50V |
Typical Forward Transconductance (S) | 10(Min) |
Maximum Power Dissipation (mW) | 795000 |
Output Power (W) | 400 |
Typical Power Gain (dB) | 25 |
Maximum Frequency (MHz) | 150 |
Typical Drain Efficiency (%) | 50 |
Minimum Operating Temperature (°C) | -65 |
Maximum Operating Temperature (°C) | 200 |
Packaging | Box |
Mounting | Screw |
Package Height | 0.28(Max) |
Package Width | 0.27 |
Package Length | 1.14 |
PCB changed | 5 |
Supplier Package | Case M-177 |
Pin Count | 5 |