Infineon Technologies AGBCR116E6327HTSA1BJT digital

Trans Digital BJT NPN 50V 0.1mA 200mW 3-Pin SOT-23 T/R Automotive AEC-Q101

Are you designing a digital processing circuit and are looking to apply the characteristics of traditional BJT's within? Look no further than the NPN BCR116E6327HTSA1 digital transistor from Infineon Technologies. This product's maximum continuous DC collector current is 100 mA, while its minimum DC current gain is 70@5mA@5 V. It has a maximum collector emitter saturation voltage of 0.3@0.5mA@10mA V. It has a maximum collector emitter voltage of 50 V. Its maximum power dissipation is 200 mW. Tape and reel packaging will encase this product during shipment, in order to ensure safe delivery and enable quick mounting of components. This transistor has an operating temperature range of -65 °C to 150 °C. It is made in a single configuration.

12,000 piezas: Se puede enviar en 3 días

    Total$115.50Price for 3000

    • (3000)

      Se puede enviar en 3 días

      Ships from:
      Países Bajos
      Date Code:
      2450+
      Manufacturer Lead Time:
      4 semanas
      Country Of origin:
      China
      • In Stock: 12,000 piezas
      • Price: $0.0385