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Infineon Technologies AGBFR93AE6327HTSA1BJT RF
Trans RF BJT NPN 12V 0.09A 300mW 3-Pin SOT-23 T/R Automotive AEC-Q101
Compliant | |
EAR99 | |
Active | |
8541.29.00.95 | |
Automotive | Yes |
PPAP | Unknown |
NPN | |
Si | |
Single | |
1 | |
20 | |
12 | |
<20 | |
2 | |
0.09 | |
0.06 to 0.12 | |
10000 | |
100 | |
8V/30mA | |
70@30mA@8V | |
50 to 120 | |
1.9 | |
0.54 | |
300 | |
6(Typ) | |
14.5 | |
15(Typ) | |
6000(Typ) | |
2.6(Typ) | |
-55 | |
150 | |
Automotive | |
Tape and Reel | |
Mounting | Surface Mount |
Package Height | 1(Max) |
Package Width | 1.3 |
Package Length | 2.9 |
PCB changed | 3 |
Standard Package Name | SOT |
Supplier Package | SOT-23 |
3 | |
Lead Shape | Gull-wing |
Compared to other transistors, the BFR93AE6327HTSA1 RF bi-polar junction transistor, developed by Infineon Technologies, can properly function in the event of high radio frequency power situations. This RF transistor has an operating temperature range of -55 °C to 150 °C.