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Infineon Technologies AGBFR93AE6327HTSA1BJT FR
Trans RF BJT NPN 12V 0.09A 300mW 3-Pin SOT-23 T/R Automotive AEC-Q101
| Compliant | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| Automotive | Yes |
| PPAP | Unknown |
| NPN | |
| Si | |
| Single | |
| 1 | |
| 20 | |
| 12 | |
| <20 | |
| 2 | |
| 0.09 | |
| 0.06 to 0.12 | |
| 10000 | |
| 100 | |
| 8V/30mA | |
| 70@30mA@8V | |
| 50 to 120 | |
| 1.9 | |
| 0.54 | |
| 300 | |
| 6(Typ) | |
| 14.5 | |
| 15(Typ) | |
| 6000(Typ) | |
| 2.6(Typ) | |
| -55 | |
| 150 | |
| Automotive | |
| Tape and Reel | |
| Installation | Surface Mount |
| Hauteur du paquet | 1(Max) |
| Largeur du paquet | 1.3 |
| Longueur du paquet | 2.9 |
| Carte électronique changée | 3 |
| Nom de lemballage standard | SOT |
| Conditionnement du fournisseur | SOT-23 |
| 3 | |
| Forme de sonde | Gull-wing |
Compared to other transistors, the BFR93AE6327HTSA1 RF bi-polar junction transistor, developed by Infineon Technologies, can properly function in the event of high radio frequency power situations. This RF transistor has an operating temperature range of -55 °C to 150 °C.
| EDA / CAD Models |