| ECCN (Estados Unidos) | EAR99 |
| Código HTS | EA |
| Configuration | Single |
| Type | MOSFET |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Mode of Operation | Pulsed RF |
| Process Technology | LDMOS |
| Maximum Drain Source Voltage (V) | 106 |
| Maximum Gate Source Voltage (V) | 11 |
| Maximum Drain Source Resistance (mOhm) | 890(Typ)@6.25V |
| Output Power (W) | 30 |
| Typical Power Gain (dB) | 21 |
| Maximum Frequency (MHz) | 2000 |
| Minimum Frequency (MHz) | 1 |
| Typical Drain Efficiency (%) | 65 |
| Minimum Operating Temperature (°C) | -65 |
| Maximum Operating Temperature (°C) | 225 |
