Product Technical Specifications
| EAR99 | |
| EA | |
| Single | |
| MOSFET | |
| Enhancement | |
| N | |
| 1 | |
| Pulsed RF | |
| LDMOS | |
| 106 | |
| 11 | |
| 890(Typ)@6.25V | |
| 30 | |
| 21 | |
| 2000 | |
| 1 | |
| 65 | |
| -65 | |
| 225 |
Symbols and Footprints
| EDA / CAD Models |
|
| ECCN (US) | EAR99 |
| HTS | EA |
| Configuration | Single |
| Type | MOSFET |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Mode of Operation | Pulsed RF |
| Process Technology | LDMOS |
| Maximum Drain Source Voltage (V) | 106 |
| Maximum Gate Source Voltage (V) | 11 |
| Maximum Drain Source Resistance (mOhm) | 890(Typ)@6.25V |
| Output Power (W) | 30 |
| Typical Power Gain (dB) | 21 |
| Maximum Frequency (MHz) | 2000 |
| Minimum Frequency (MHz) | 1 |
| Typical Drain Efficiency (%) | 65 |
| Minimum Operating Temperature (°C) | -65 |
| Maximum Operating Temperature (°C) | 225 |
| EDA / CAD Models |
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