STMicroelectronics D44H8 GP BJT
Trans GP BJT NPN 60V 10A 50000mW 3-Pin(3+Tab) TO-220AB Tube
Especificaciones técnicas del producto
| Compliant with Exemption | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| SVHC | Yes |
| Índice de SEP por encima del límite autorizado | Yes |
| Automotive | No |
| PPAP | No |
| Mounting | Through Hole |
| Package Height | 9.15(Max) |
| Package Width | 4.6(Max) |
| Package Length | 10.4(Max) |
| PCB changed | 3 |
| Tab | Tab |
| Standard Package Name | TO |
| Supplier Package | TO-220AB |
| 3 | |
| Lead Shape | Through Hole |
The NPN D44H8 general purpose bipolar junction transistor, developed by STMicroelectronics, is the perfect solution for your high-current density needs. This bipolar junction transistor's maximum emitter base voltage is 5 V. Its maximum power dissipation is 50000 mW. In order to ensure parts aren't damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. It has a maximum collector emitter voltage of 60 V and a maximum emitter base voltage of 5 V. This bipolar junction transistor has an operating temperature range of -55 °C to 150 °C.
Símbolos y Huellas
| EDA / CAD Models |
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