| Not Compliant | |
| EAR99 | |
| Obsolete | |
| 8542.32.00.71 | |
| SVHC | Yes |
| Índice de SEP por encima del límite autorizado | Yes |
| Automotive | No |
| PPAP | No |
| NPN | |
| Array 7 | |
| 7 | |
| 55 | |
| 6 | |
| 0.5 | |
| 1.1@250uA@100mA|1.3@350uA@200mA|1.6@500uA@350mA | |
| -40 | |
| 85 | |
| Tube | |
| Mounting | Surface Mount |
| Package Height | 1.5(Max) |
| Package Width | 4(Max) |
| Package Length | 10(Max) |
| PCB changed | 16 |
| Standard Package Name | SO |
| Supplier Package | SOIC |
| 16 | |
| Lead Shape | Gull-wing |
If you require a higher current gain value in your circuit, then the NPN DS2003CM Darlington transistor, developed by Texas Instruments, is for you. This Darlington transistor array's maximum emitter base voltage is 6 V. This product's maximum continuous DC collector current is 0.5 A. It has a maximum collector emitter saturation voltage of 1.1@250uA@100mA|1.3@350uA@200mA|1.6@500uA@350mA V. In order to ensure parts aren't damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This Darlington transistor array has an operating temperature range of -40 °C to 85 °C. It has a maximum collector emitter voltage of 55 V and a maximum emitter base voltage of 6 V.
| EDA / CAD Models |