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IXYSIXGT30N120B3D1Chip IGBT
Trans IGBT Chip 1200V 50A 3-Pin(2+Tab) TO-268
Compliant with Exemption | |
EAR99 | |
Active | |
EA | |
SVHC | Yes |
Índice de SEP por encima del límite autorizado | Yes |
Automotive | No |
PPAP | No |
1200 | |
3.5(Max) | |
50 | |
-55 | |
150 | |
Mounting | Surface Mount |
Package Height | 5.1(Max) |
Package Width | 14(Max) |
Package Length | 16.05(Max) |
PCB changed | 2 |
Tab | Tab |
Supplier Package | TO-268 |
3 |
This IXGT30N120B3D1 IGBT transistor from Ixys Corporation is an electronic switch that can handle large currents with very little gate current drive. It has a maximum collector emitter voltage of 1200 V. This IGBT transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.