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IXYSIXGT30N120B3D1Puce IGBT
Trans IGBT Chip 1200V 50A 3-Pin(2+Tab) TO-268
| Compliant with Exemption | |
| EAR99 | |
| Active | |
| EA | |
| SVHC | Yes |
| Taux de SVHC dépassant le seuil autorisé | Yes |
| Automotive | No |
| PPAP | No |
| 1200 | |
| 3.5(Max) | |
| 50 | |
| -55 | |
| 150 | |
| Installation | Surface Mount |
| Hauteur du paquet | 5.1(Max) |
| Largeur du paquet | 14(Max) |
| Longueur du paquet | 16.05(Max) |
| Carte électronique changée | 2 |
| Onglet | Tab |
| Conditionnement du fournisseur | TO-268 |
| 3 |
This IXGT30N120B3D1 IGBT transistor from Ixys Corporation is an electronic switch that can handle large currents with very little gate current drive. It has a maximum collector emitter voltage of 1200 V. This IGBT transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.
| EDA / CAD Models |