| Compliant with Exemption | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| SVHC | Yes |
| Índice de SEP por encima del límite autorizado | Yes |
| Automotive | No |
| PPAP | No |
| Mounting | Through Hole |
| Package Height | 8.51(Max) mm |
| Package Width | 26.67(Max) mm |
| Package Length | 39.37 mm |
| PCB changed | 2 |
| Tab | Tab |
| Standard Package Name | TO |
| Supplier Package | TO-3 |
| 3 | |
| Lead Shape | Through Hole |
Implement this NPN MJ802G GP BJT from ON Semiconductor to add switching and amplifying capabilities to your electronic circuit design. This bipolar junction transistor's maximum emitter base voltage is 4 V. Its maximum power dissipation is 200000 mW. The component will be shipped in tray format. This bipolar junction transistor has a minimum operating temperature of -65 °C and a maximum of 200 °C. It has a maximum collector emitter voltage of 90 V and a maximum emitter base voltage of 4 V.
| EDA / CAD Models |