| RoHS (Union Européenne) | Compliant with Exemption |
| ECCN (États-Unis) | EAR99 |
| Statut de pièce | Active |
| Code HTS | 8541.29.00.95 |
| SVHC | Yes |
| Taux de SVHC dépassant le seuil autorisé | Yes |
| Automotive | No |
| PPAP | No |
| Installation | Through Hole |
| Hauteur du paquet | 8.51(Max) mm |
| Largeur du paquet | 26.67(Max) mm |
| Longueur du paquet | 39.37 mm |
| Carte électronique changée | 2 |
| Onglet | Tab |
| Nom de lemballage standard | TO |
| Conditionnement du fournisseur | TO-3 |
| Décompte de broches | 3 |
| Forme de sonde | Through Hole |
Implement this NPN MJ802G GP BJT from ON Semiconductor to add switching and amplifying capabilities to your electronic circuit design. This bipolar junction transistor's maximum emitter base voltage is 4 V. Its maximum power dissipation is 200000 mW. The component will be shipped in tray format. This bipolar junction transistor has a minimum operating temperature of -65 °C and a maximum of 200 °C. It has a maximum collector emitter voltage of 90 V and a maximum emitter base voltage of 4 V.
