onsemiMJE172GGP BJT

Trans GP BJT PNP 80V 3A 1500mW 3-Pin(3+Tab) TO-225 Box

Implement this versatile PNP MJE172G GP BJT from ON Semiconductor into an electronic circuit to be used as a current or voltage-controlled switch or amplifier. This bipolar junction transistor's maximum emitter base voltage is 7 V. Its maximum power dissipation is 12500 mW. This bipolar junction transistor has an operating temperature range of -65 °C to 150 °C. It has a maximum collector emitter voltage of 80 V and a maximum emitter base voltage of 7 V.

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Total en Stock: 4,228 piezas

Regional Inventory: 728

    Total$0.86Price for 1

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      Ships from:
      Estados Unidos de América
      Date Code:
      2422+
      Manufacturer Lead Time:
      10 semanas
      Country Of origin:
      China
      • In Stock: 728 piezas
      • Price: $0.8564
    • (500)

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      Ships from:
      Países Bajos
      Date Code:
      +
      Manufacturer Lead Time:
      10 semanas
      • In Stock: 3,500 piezas
      • Price: $0.3078