onsemiMJE172GGP BJT

Trans GP BJT PNP 80V 3A 1500mW 3-Pin(3+Tab) TO-225 Box

Implement this versatile PNP MJE172G GP BJT from ON Semiconductor into an electronic circuit to be used as a current or voltage-controlled switch or amplifier. This bipolar junction transistor's maximum emitter base voltage is 7 V. Its maximum power dissipation is 12500 mW. This bipolar junction transistor has an operating temperature range of -65 °C to 150 °C. It has a maximum collector emitter voltage of 80 V and a maximum emitter base voltage of 7 V.

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      Date Code:
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